HIGH POWER MOSFET MODELING WITH SPICE


ABSTRACT

A SPICE model developed for low frequency switching MOSFETs when, applied to RF power MOSFETs, simulates key non-linear performance. In the paper referenced below, an older model is modified to eliminate an inaccuracy in large signal analysis. The new model has the advantage of easily extracted parameters and serves as an important element in Computer Aided Design of high power RF amplifiers. This modeling helps an amplifier manufacturer achieve performance with lower hardware development costs, and solves problems associated with lot-to-lot variation in power MOSFETs. Presented is the design of a 10 W oscillator in the FM frequency baud using a Motorola MRF136 power MOSFET. Design details include the SPICE file for the MOSFET model, a schematic, and a parts list. Comparison of computer predictions with measured performance confirm modeling accuracy. Although the oscillator design example is simple, it serves as a good starting point for applying the modeling to more complicated, high performance amplifiers.

"10 W 100 MHz Oscillator Tests Improved MOSFET Modeling with SPICE," Proceedings RF Technology EXPOWest - 1990, Dr. Paul Finman.


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